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M52D32162A-10BG - 1M x 16Bit x 2Banks Synchronous DRAM

M52D32162A-10BG_4394418.PDF Datasheet


 Full text search : 1M x 16Bit x 2Banks Synchronous DRAM


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PART Description Maker
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
AMIC Technology
M52D32162A-10BG M52D32162A-10TG M52D32162A-7.5BG M 1M x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M52S32162A-10BIG M52S32162A-10TIG M52S32162A-7.5BI 1M x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M12L32162A-5.5BG M12L32162A09 M12L32162A-5.5TG M12 1M x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M12S16161A1 M12S16161A-7BIG M12S16161A-7TIG M12S16 512K x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M52D32162A-7BG M52D32162A-7TG M52D32162A09 M52D321 1M x 16Bit x 2Banks Mobile Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M12L16161A M12L16161A-4.3T M12L16161A-5.5T M12L161 512K x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
ETC
T431616C-7SG T431616C T431616C-6S T431616C-6SG T43 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
TMT[Taiwan Memory Technology]
M52S32162A-10TG 1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
Elite Semiconductor Memory Technology, Inc.
K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
Samsung Electronic
SAMSUNG[Samsung semiconductor]
 
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